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Samsung M386AAG40DM3-CWE 128GB DDR4 DIMM 3200MT/s | Massive Capacity

MPN:M386AAG40DM3-CWE By:Samsung Warranty:1 year
US$3,976 - $4,307
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General

Product TypeMemory Module
Memory Capacity128 GB
Memory TechnologyDDR4
Product Voltage1.2 V
RAM Speed3200 MHz
RAM StandardDDR4-3200/PC4-25600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL22
RankQuad Rank x4
Quantity of Pins288-pin
RAM GenreDIMM

Engineer's Note

Designed for enterprise-class servers, this 128GB DDR4-3200 Registered ECC DIMM delivers the data integrity and reliability required for memory-intensive workloads like virtualization, in-memory databases, and high-density cloud computing. Its quad-rank x4 organization and CL22 latency maximize capacity per channel while registered signal buffering ensures stable operation across fully populated multi-DIMM platforms.

Technical Specs & Insights

1. 128GB capacity per module maximizes memory density per channel, enabling heavier virtual machine consolidation without sacrificing performance in large-scale virtualization hosts.
2. ECC error correction silently detects and corrects single-bit data errors, preventing silent data corruption that could crash long-running database or analytics workloads.
3. Registered signal buffering stabilizes electrical loading when multiple DIMMs populate a server board, ensuring reliable operation across fully loaded memory channels in multi-socket platforms.
4. Quad Rank x4 organization packs more memory devices per DIMM, delivering the raw capacity footprints needed for in-memory databases and massive caching tiers without wasting physical slots.
5. 3200MT/s transfer speed elevates per-channel throughput, directly accelerating memory-bandwidth-hungry workloads like real-time financial simulation and high-frequency AI inference serving.

Why These Specs Matter

The Samsung M386AAG40DM3-CWE is a 128 GB DDR4-3200 Registered DIMM with ECC, purpose‑built for enterprise servers where data integrity and uninterrupted operation are non‑negotiable. Its four defining characteristics—ECC error correction, registered buffering, a quad‑rank x4 architecture, and a disciplined CL22 latency—directly address the real‑world pressures faced by data center teams. In dense virtualization clusters, ECC transparently corrects single‑bit memory errors caused by background radiation before they corrupt a virtual machine’s state, preventing silent data corruption that could trigger cascading application failures. The registered buffer stabilizes the command bus so you can fully populate every memory channel with these high‑capacity modules, scaling a single host to terabytes of reliable RAM for live‑migrating hundreds of workloads without signal degradation. For in‑memory database platforms like SAP HANA or Redis, the quad‑rank x4 layout interleaves banks to deliver the sustained bandwidth analytical queries demand, while the strict CL22 timing guarantees deterministic access latencies that accelerate transaction commits. Powered at a mere 1.2 V, this module combines massive capacity with energy efficiency, turning a standard dual‑socket server into a resilient engine for both cloud‑native microservices and latency‑sensitive financial trading systems.

Endurance & Reliability

Memory type: Server (Registered ECC DIMM). This 128 GB DDR4-3200 quad-rank module suits enterprise servers; capacity planning must account for high density and rank loading.

General Virtualization
Populate one DIMM per channel to avoid speed drops. For an 8-channel CPU, 8 modules deliver 1 TB at full 3200 MT/s, ideal for dense VM hosting. Using two quad-rank DIMMs per channel may reduce frequency, so keep to one per channel unless maximum capacity is needed.

In-Memory Database
Fill all channels with one DIMM for balanced latency. If greater capacity is required, populate two per channel accepting a speed downgrade to 2666 MT/s. The high 128 GB density minimizes module count, easing cooling and power delivery; ECC guarantees data integrity for caching workloads.

High-Performance Computing (HPC)
Bandwidth is critical: install one DIMM per channel to sustain 3200 MT/s. A dual-socket platform with a symmetric 16-module layout (one per channel) provides uniform memory access. Strictly follow the motherboard population guide because quad-rank loading often triggers clock reductions with non-ideal configurations.

Verified Compatibility

Rigorously tested, compatible with Dell PowerEdge R750, HPE ProLiant DL380 Gen10+, Lenovo ThinkSystem SR650 V2.

FAQ

Q: Can I mix this M386AAG40DM3-CWE with other memory modules of different brands or speeds?

A: Mixing Registered DIMMs is not recommended. Even minor differences in rank, timing, or vendor can cause stability issues in servers. For guaranteed reliability, populate all channels with identical Samsung modules.

Q: Is this memory compatible with my system?

A: This 128GB DDR4-3200 ECC Registered DIMM is designed for dual-socket server platforms using Intel Xeon Scalable or AMD EPYC 7002/7003 series processors. It requires a C620 or equivalent chipset with 288-pin slots.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical modules starting with the first slot of each memory channel, typically slots A1, B1, C1, D1 on most servers. Always follow your server board’s specific population guide to maintain balanced interleaving and maximum bandwidth.

Q: Does this module support overclocking or XMP profiles?

A: No. This is a server-grade Registered ECC DIMM adhering to JEDEC standard DDR4-3200 (PC4-25600) at 1.2V. It does not support XMP or overclocking; only certified JEDEC timings are available for enterprise reliability.

Q: What warranty and typical failure rate can I expect?

A: This module comes with a 1-year warranty. Enterprise Samsung RDIMMs have an extremely low annualized failure rate (typically under 0.5%) under correct environmental conditions, backed by rigorous factory testing and ECC protection.

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